• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The amplifier circuit, in particular for RF purposes, controls the main current flow of a controllable RF semiconductor device having a control input, a control means having a control output connected to the control input to control the main current flow, and a control to compensate the controllable semiconductor device A compensation circuit having a compensation output coupled to the input. The compensating circuit is configured to operate in the active region temporarily during a time interval in which the control means does not provide a control output signal to the control input of the controllable semiconductor device. This provides a suitable solution for handling IC device and DC regulation disturbances in a low DC current dissipation scheme caused by lack of pulldown capacity when the amplifier circuit operates at very high frequencies or at relatively large amplitudes.
    公开号:KR20000064868A
    申请号:KR1019980707980
    申请日:1998-01-15
    公开日:2000-11-06
    发明作者:핸드릭 아렌드 비제르
    申请人:롤페스 요하네스 게라투스 알베르투스；코닌클리즈케 필립스 일렉트로닉스 엔.브이.；
    IPC主号:
    专利说明:

    Amplifier Circuits, Transmitters, and Cordless Phones
    The amplifier circuit is known from US Pat. No. 4,481,481. The known amplifier circuit is a controllable semiconductor device in the form of an emitter grounded transistor having a control input formed as a base, and in the form of an emitter follower transistor having a signal input and having a control output of the emitter. The control means comprises a compensation circuit having an input connected to the collector of the emitter follower transistor and in the form of a current mirror having a transistor which is a compensating output connected to the base of the emitter grounded transistor. The amplifier circuit also includes a DC current source connected to the terminal of the power supply and the emitter follower transistor. Part of the current supplied by the current source flows into the collector of the emitter follower transistor, while the other part flows through the current mirror. The pull up or pull down of the input signal at the signal input of the emitter follower raises or lowers the base potential of the emitter ground transistor, respectively, so that it acts as a drive stage or end stage, whereby the driving force obtainable is at its maximum. . Independently of the conduction state of the emitter follower transistor, the DC current can at least flow through the current mirror of the compensation circuit. This has the drawback in known amplifier circuits that the compensation circuitry operates permanently in the active region and also has the effect of reducing the consumption of DC current from the power supply.
    The invention comprises a control input, control means having a control output connected to the control input for controlling the main current stream, and a compensation circuit having a compensation output connected to the control input for compensating the controllable semiconductor device. An amplifier circuit comprising a main current flow of a controllable semiconductor device.
    The invention also relates to an integrated circuit with said amplifier circuit, a transmitter, and a cordless telephone.
    1 shows schematically a possible embodiment of an amplifier circuit according to the invention.
    FIG. 2 is a compensation circuit used for the amplifier circuit shown in FIG.
    3 is a graph of a control signal that serves to explain the operation of the embodiment shown in FIGS. 1 and 2.
    4 shows an example of a network with a cordless telephone provided to a transmitter having a circuit according to the invention.
    In the drawings, like reference numerals refer to like parts.
    It is an object of the present invention to obviate the above drawback by providing an alternative amplifier circuit having minimal current consumption, without limiting the possible RF amplification performance of the amplifier circuit. For this purpose, the amplifier circuit according to the invention is characterized in that the compensation circuit is configured to be operable temporarily in the active region during a period of time during which the control means does not supply a control output signal to the control input of the controllable semiconductor device. Have
    The amplifier circuit according to the invention has the advantage that it is only temporarily active when no control output signal is input to the control input terminal of the semiconductor device whose compensating circuit is controllable. The compensation circuit operates in the active region during the time period in which the potential of the control input terminal of the controllable semiconductor device falls. During the drop, the input capacitance of the controllable semiconductor device becomes virtually empty, resulting in abnormally emptying the input capacitance, such as in amplifying very high frequencies and / or amplifying signals with relatively large amplitudes. DC coordination disturbances do not occur.
    Moreover, the proposed amplifier circuit according to the present invention can be easily integrated in a very small area of the IC, while minimizing the number of components not in the semiconductor circuit chip. Another additional feature is that the amplifier circuit according to the present invention can be used as a transmitter in a mobile application, such as a mobile communication device, a mobile telephone, a mobile fax device, and the like, in which the power consumption is generally derived from a rechargeable battery; or A reduction in current consumption is made, which makes it more suitable even in applications at the transmitter end stage.
    These and other features of the invention will be apparent from and elucidated with reference to the embodiments described below.
    Figure 1 schematically shows an amplifier circuit 1 suitable for use in the last stage of a transmitter where large signal elements are generally high at very high frequencies. The amplifier circuit 1 has a control input 4 for controlling the main current flow 2, the main current flow 2 of the controllable semiconductor device 3, in particular the controllable RF semiconductor device, having a control input 4. Control means 5 having a control output 6 connected to it, and a compensation circuit 7 having a compensation output 8 connected to the control input 4. For simplicity, another circuit for adjusting the DC value in circuit 1 is not shown in the figure. The control means 5 are provided with a signal input 9 for input to amplify the signal into the circuit 1.
    An example of the control signal at the control input 4 is shown in FIG. 3. During pull-up, the positive characteristic signal, which is half of the control signal, causes an increase in the current forced by the control means 5 in the main current flow 2 of the controllable device 3 and vice versa. The process of takes place during the pull-down period in which the current is reduced from the control input 4. If the signals are inputs with high frequencies and / or relatively large amplitudes, for example from 450 MHz to 2500 MHz, especially the parasitic capacities at the control input 4 of the controllable semiconductor device 3 are amplified. Begins to play an important role in. In the negative characteristic signal, which is half of the signal in FIG. 3, the amount of reduced current from the control input 4 of the device 3, ie the lost amount of current, causes the parasitic capacitance to discharge in the control input stage 4. If is inadequate, a situation may arise where the DC current regulation, as indicated by the dashed line in FIG. 3, is disturbed by the permanent conduction state of the device 3. This is the compensation circuit 7 which serves to compensate the controllable semiconductor device 3 in such a way that during the time period A when half of the control signal is decreasing, the compensation circuit 7 is temporarily operated in the active region. Should be prevented in advance, and the control means 5 does not provide a control output signal to the control input 4 of the controllable semiconductor device 3 and the compensation circuit 7 does not provide a control input ( Reduce the discharge current from the eddy current capacity of 4). The thus compensated control signal on the control input 4 will look like the dashed line shown in FIG. 3.
    The compensation circuit 7 is provided with a compensation input terminal 10, which is preferably supplied in accordance with the control output signal to the control output terminal 6 provided to the controllable semiconductor device 3. The reason for this is that in the present embodiment, if a current flows simultaneously in the control means 5 and the compensation means 7, the circuit is almost shorted. Information on proper timing to avoid this short circuit is obtained in the embodiment of FIG. 1 by means of a feedback circuit 11 comprising a component which depends on the frequency, here an element in the form of a capacitor 12. Appropriate capacity for amplifying a frequency between 600 MHz and 2400 MHz can be calculated to be between 100 femto farads and 3 pico farads sufficient to open the compensation circuit 7 during period A as described in FIG. 3. . The control means 5 have a main current flow 13 and a feedback circuit 11 is connected between the main current flow 13 and the compensation input 10 of the compensation circuit 7. In the embodiment of Figure 1, the capacitor value is about 3 pF for the 1800 MHz amplified signal.
    In another embodiment, the feedback circuit 11 has a control input 15 connected to the main current flow 13 of the control means 5 and an output 16 connected to the compensation input 10 of the compensation circuit 7. And a semiconductor bonding device in the form of a controllable semiconductor 14 having a. In this case, the adjustment circuit is not shown in the figure. This embodiment makes it easy to drive the compensating circuit 7 in the form of a controllable semiconductor 17 as shown, the drive being such that the main current flow 13 flows from the terminal 18 through the terminal. It is driven. In another embodiment of the above, the capacitance of the capacitor 12 may be about 175 fF for the 1800 MHz amplification frequency. Assuming that FIG. 3 operates as described above, the capacitance of the capacitor 11 includes the frequency, the voltage across the feedback resistor R connected between the terminal 18 and the power supply terminal V s , and the capacitor 11. It can be calculated from the current flowing through it.
    FIG. 4 shows an example of a network 19 comprising a mobile / portable phone 20 shown schematically, with a transmitter / circuit 1 generally integrated in an IC.
    Of course, the telephone 20 may have additional functions such as handless performance, listening characteristics, dialing characteristics, charging convenience mechanisms, etc., and may include all other features necessary for proper functioning.
    权利要求:
    Claims (11)
    [1" claim-type="Currently amended] A control means having a main current stream of a controllable semiconductor device having a control input, a control means having a control output connected to the control input for controlling the main current stream, and a compensation connected to the control input for compensating the controllable semiconductor device. An amplifier circuit comprising a compensation circuit having an output stage,
    And the compensation circuitry is configured to be operated temporarily in an active region during a time when the control means does not supply a control output signal to the control input of the controllable semiconductor device.
    [2" claim-type="Currently amended] The amplifier circuit according to claim 1, wherein said compensation circuit has a compensation input stage and a compensation signal is supplied to said compensation input stage in accordance with said control output signal supplied to said controllable semiconductor device.
    [3" claim-type="Currently amended] 3. The control means according to claim 2, wherein the control means is provided with a main current stream of semiconductor and the amplifier circuit comprises a feedback circuit connected between the main current flow of the control means and the compensation input of the compensation circuit. Amplifier circuit.
    [4" claim-type="Currently amended] 4. The amplifier circuit of claim 3 wherein the feedback circuit comprises a frequency-dependent component.
    [5" claim-type="Currently amended] 5. The amplifier circuit of claim 4 wherein the frequency-dependent component comprises a capacitor and / or one or more semiconductor junctions.
    [6" claim-type="Currently amended] The amplifier circuit of claim 5, wherein the capacitor has a capacity of about 100 fF to 3 pF to amplify a frequency between 450 MHz and 2500 MHz.
    [7" claim-type="Currently amended] 7. The control circuit according to claim 3, 4, 5 or 6, wherein the feedback circuit has a control input connected to the main current flow of the control means and has an output connected to the compensation input of the compensation circuit. And an amplifier controllable semiconductor.
    [8" claim-type="Currently amended] The amplifier circuit according to any one of claims 1 to 7, wherein the controllable semiconductor device is a controllable RF semiconductor device.
    [9" claim-type="Currently amended] In an integrated circuit,
    An integrated circuit according to any one of claims 1 to 8, wherein an amplifier circuit is provided.
    [10" claim-type="Currently amended] In the transmitter,
    A transmitter according to any one of claims 1 to 8 or an integrated circuit according to claim 9 is provided.
    [11" claim-type="Currently amended] In a cordless phone,
    A radiotelephone comprising: an amplifier circuit according to any one of claims 1 to 8, an integrated circuit according to claim 9, or a transmitter according to claim 10.
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    同族专利:
    公开号 | 公开日
    WO1998035437A2|1998-08-13|
    WO1998035437A3|1998-11-26|
    US5963095A|1999-10-05|
    DE69825369T2|2005-08-04|
    DE69825369D1|2004-09-09|
    EP0891650B1|2004-08-04|
    EP0891650A2|1999-01-20|
    JP2000508869A|2000-07-11|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1997-02-07|Priority to EP97200341
    1997-02-07|Priority to EP97200341.2
    1998-01-15|Application filed by 롤페스 요하네스 게라투스 알베르투스, 코닌클리즈케 필립스 일렉트로닉스 엔.브이.
    1998-01-15|Priority to PCT/IB1998/000049
    2000-11-06|Publication of KR20000064868A
    优先权:
    申请号 | 申请日 | 专利标题
    EP97200341|1997-02-07|
    EP97200341.2|1997-02-07|
    PCT/IB1998/000049|WO1998035437A2|1997-02-07|1998-01-15|An amplifier circuit, a transmitter and a wireless telephone|
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